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agilent atf-54143 low noise enhancement mode pseudomorphic hemt in a surface mount plastic package data sheet description agilent technologiess atf-54143 is a high dynamic range, low noise, e-phemt housed in a 4-lead sc-70 (sot-343) surface mount plastic package. the combination of high gain, high linearity and low noise makes the atf-54143 ideal for cellular/pcs base stations, mmds, and other systems in the 450 mhz to 6 ghz frequency range. features ? high linearity performance ? enhancement mode technology [1] ? low noise figure ? excellent uniformity in product specifications ? 800 micron gate width ? low cost surface mount small plastic package sot-343 (4 lead sc- 70) ? tape-and-reel packaging option available ? lead-free option available. specifications 2 ghz; 3v, 60 ma (typ.) ? 36.2 dbm output 3 rd order intercept ? 20.4 dbm output power at 1 db gain compression ? 0.5 db noise figure ? 16.6 db associated gain applications ? low noise amplifier for cellular/pcs base stations ? lna for wlan, wll/rll and mmds applications ? general purpose discrete e-phemt for other ultra low noise applications note: 1. enhancement mode technology requires positive vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices. surface mount package sot-343 pin connections and package marking source drain gate source 4fx note: top view. package marking provides orientation and identification 4f = device code x = date code character identifies month of manufacture. attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) esd human body model (class 1a) refer to agilent application note a004r: electrostatic discharge damage and control.
2 atf-54143 absolute maximum ratings [1] absolute symbol parameter units maximum v ds drain - source voltage [2] v5 v gs gate - source voltage [2] v -5 to 1 v gd gate drain voltage [2] v -5 to 1 i ds drain current [2] ma 120 p diss total power dissipation [3] mw 725 p in max. rf input power dbm 13 [5] i gs gate source current ma 2 [5] t ch channel temperature c 150 t stg storage temperature c -65 to 150 jc thermal resistance [4] c/w 162 notes: 1. operation of this device in excess of any one of these parameters may cause permanent damage. 2. assumes dc quiescent conditions. 3. source lead temperature is 25 c. derate 6.2 mw/ c for t l > 33 c. 4. thermal resistance measured using 150 c liquid crystal measurement method. 5. the device can handle +13 dbm rf input power provided i gs is limited to 2 ma. i gs at p 1db drive level is bias circuit dependent. see application section for additional information. product consistency distribution charts [6, 7] v ds (v) figure 1. typical i-v curves. (v gs = 0.1 v per step) i ds (ma) 0.4v 0.5v 0.6v 0.7v 0.3v 02 146 5 37 120 100 80 60 40 20 0 oip3 (dbm) figure 2. oip3 @ 2 ghz, 3 v, 60 ma. lsl = 33.0, nominal = 36.575 30 34 32 38 40 36 42 160 120 80 40 0 cpk = 0.77 stdev = 1.41 -3 std gain (db) figure 3. gain @ 2 ghz, 3 v, 60 ma. usl = 18.5, lsl = 15, nominal = 16.6 14 16 15 18 17 19 200 160 120 80 40 0 cpk = 1.35 stdev = 0.4 -3 std +3 std nf (db) figure 4. nf @ 2 ghz, 3 v, 60 ma. usl = 0.9, nominal = 0.49 0.25 0.65 0.45 0.85 1.05 160 120 80 40 0 cpk = 1.67 stdev = 0.073 +3 std notes: 6. distribution data sample size is 450 samples taken from 9 different wafers. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. measurements made on production test board. this circuit represents a trade-off between an optimal noise match and a realizea ble match based on production test equipment. circuit losses have been de-embedded from actual measurements.
3 atf-54143 electrical specifications t a = 25 c, rf parameters measured in a test circuit for a typical device symbol parameter and test condition units min. typ. [2] max. vgs operational gate voltage vds = 3v, ids = 60 ma v 0.4 0.59 0.75 vth threshold voltage vds = 3v, ids = 4 ma v 0.18 0.38 0.52 idss saturated drain current vds = 3v, vgs = 0v a1 5 gm transconductance vds = 3v, gm = ? idss/ ? vgs; mmho 230 410 560 ? vgs = 0.75 - 0.7 = 0.05v igss gate leakage current vgd = vgs = -3v a 200 nf noise figure [1] f = 2 ghz vds = 3v, ids = 60 ma db 0.5 0.9 f = 900 mhz vds = 3v, ids = 60 ma db 0.3 ga associated gain [1] f = 2 ghz vds = 3v, ids = 60 ma db 15 16.6 18.5 f = 900 mhz vds = 3v, ids = 60 ma db 23.4 oip3 output 3 rd order f = 2 ghz vds = 3v, ids = 60 ma dbm 33 36.2 intercept point [1] f = 900 mhz vds = 3v, ids = 60 ma dbm 35.5 p1db 1db compressed f = 2 ghz vds = 3v, ids = 60 ma dbm 20.4 output power [1] f = 900 mhz vds = 3v, ids = 60 ma dbm 18.4 notes: 1. measurements obtained using production test board described in figure 5. 2. typical values measured from a sample size of 450 parts from 9 wafers. input 50 ohm transmission line including gate bias t (0.3 db loss) input matching circuit _mag = 0.30 _ang = 150 (0.3 db loss) output matching circuit _mag = 0.035 _ang = -71 (0.4 db loss) dut 50 ohm transmission line including drain bias t (0.3 db loss) output figure 5. block diagram of 2 ghz production test board used for noise figure, associated gain, p1db, and oip3 measurements. thi s circuit repre- sents a trade-off between an optimal noise match and associated impedance matching circuit losses. circuit losses have been de- embedded from actual measurements.
4 atf-54143 typical performance curves figure 8. gain vs. i ds and v ds tuned for max oip3 and fmin at 2 ghz. figure 10. oip3 vs. i ds and v ds tuned for max oip3 and fmin at 2 ghz. figure 12. p1db vs. i dq and v ds tuned for max oip3 and fmin at 2 ghz. figure 9. gain vs. i ds and v ds tuned for max oip3 and fmin at 900 mhz. 3v 4v i ds (ma) gain (db) 0 100 40 20 80 60 19 18 17 16 15 14 13 12 3v 4v i ds (ma) oip3 (dbm) 0 100 40 20 80 60 42 37 32 27 22 17 12 3v 4v i dq (ma) [1] p1db (dbm) 0 100 40 20 80 60 24 22 20 18 16 14 12 3v 4v i ds (ma) gain (db) 0 100 40 20 80 60 25 24 23 22 21 20 19 18 figure 11. oip3 vs. i ds and v ds tuned for max oip3 and fmin at 900 mhz. 3v 4v i ds (ma) oip3 (dbm) 0 100 40 20 80 60 40 35 30 25 20 15 figure 13. p1db vs. i dq and v ds tuned for max oip3 and fmin at 900 mhz. figure 14. gain vs. frequency and temp tuned for max oip3 and fmin at 3v, 60 ma. 3v 4v i dq (ma) [1] p1db (dbm) 0 100 40 20 80 60 23 22 21 20 19 18 17 16 15 25 c -40 c 85 c frequency (ghz) gain (db) 06 2 145 3 35 30 25 20 15 10 5 figure 7. fmin vs. i ds and v ds tuned for max oip3 and min nf at 900 mhz. 3v 4v i ds (ma) fmin (db) 0 100 40 20 80 60 0.6 0.5 0.4 0.3 0.2 0.1 0 figure 6. fmin vs. i ds and v ds tuned for max oip3 and fmin at 2 ghz. 3v 4v i ds (ma) fmin (db) 0 100 40 20 80 60 0.7 0.6 0.5 0.4 0.3 0.2 notes: 1. i dq represents the quiescent drain current without rf drive applied. under low values of i ds , the application of rf drive will cause i d to increase substantially as p1db is approached. 2. fmin values at 2 ghz and higher are based on measurements while the fmins below 2 ghz have been extrapolated. the fmin values are based on a set of 16 noise figure measure- ments made at 16 different impedances using an atn np5 test system. from these measurements a true fmin is calculated. refer to the noise parameter application section for more information.
5 atf-54143 typical performance curves, continued note: 1. fmin values at 2 ghz and higher are based on measurements while the fmins below 2 ghz have been extrapolated. the fmin values are based on a set of 16 noise figure measure- ments made at 16 different impedances using an atn np5 test system. from these measurements a true fmin is calculated. refer to the noise parameter application section for more information. atf-54143 reflection coefficient parameters tuned for maximum output ip3, v ds = 3v, i ds = 60 ma freq out_mag. [1] out_ang. [1] oip3 p1db (ghz) (mag) (degrees) (dbm) (dbm) 0.9 0.017 115 35.54 18.4 2.0 0.026 -85 36.23 20.38 3.9 0.013 173 37.54 20.28 5.8 0.025 102 35.75 18.09 note: 1. gamma out is the reflection coefficient of the matching circuit presented to the output of the device. figure 17. p1db vs. frequency and temp tuned for max oip3 and fmin at 3v, 60 ma. 25 c -40 c 85 c frequency (ghz) p1db (dbm) 06 2 145 3 21 20.5 20 19.5 19 18.5 18 17.5 17 figure 18. fmin [1] vs. frequency and i ds at 3v. frequency (ghz) fmin (db) 02 1456 37 60 ma 40 ma 80 ma 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 figure 15. fmin [2] vs. frequency and temp tuned for max oip3 and fmin at 3v, 60 ma. 25 c -40 c 85 c frequency (ghz) fmin (db) 06 2 145 3 2 1.5 1.0 0.5 0 figure 16. oip3 vs. frequency and temp tuned for max oip3 and fmin at 3v, 60 ma. 25 c -40 c 85 c frequency (ghz) oip3 (dbm) 06 2 145 3 45 40 35 30 25 20 15 10
6 atf-54143 typical scattering parameters, v ds = 3 v, i ds = 40 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.99 -17.6 27.99 25.09 168.5 0.009 80.2 0.59 -12.8 34.45 0.5 0.83 -76.9 25.47 18.77 130.1 0.036 52.4 0.44 -54.6 27.17 0.9 0.72 -114 22.52 13.37 108 0.047 40.4 0.33 -78.7 24.54 1.0 0.70 -120.6 21.86 12.39 103.9 0.049 38.7 0.31 -83.2 24.03 1.5 0.65 -146.5 19.09 9.01 87.4 0.057 33.3 0.24 -99.5 21.99 1.9 0.63 -162.1 17.38 7.40 76.6 0.063 30.4 0.20 -108.6 20.70 2.0 0.62 -165.6 17.00 7.08 74.2 0.065 29.8 0.19 -110.9 20.37 2.5 0.61 178.5 15.33 5.84 62.6 0.072 26.6 0.15 -122.6 19.09 3.0 0.61 164.2 13.91 4.96 51.5 0.080 22.9 0.12 -137.5 17.92 4.0 0.63 138.4 11.59 3.80 31 0.094 14 0.10 176.5 15.33 5.0 0.66 116.5 9.65 3.04 11.6 0.106 4.2 0.14 138.4 12.99 6.0 0.69 97.9 8.01 2.51 -6.7 0.118 -6.1 0.17 117.6 11.50 7.0 0.71 80.8 6.64 2.15 -24.5 0.128 -17.6 0.20 98.6 10.24 8.0 0.72 62.6 5.38 1.86 -42.5 0.134 -29.3 0.22 73.4 8.83 9.0 0.76 45.2 4.20 1.62 -60.8 0.145 -40.6 0.27 52.8 8.17 10.0 0.83 28.2 2.84 1.39 -79.8 0.150 -56.1 0.37 38.3 8.57 11.0 0.85 13.9 1.42 1.18 -96.9 0.149 -69.3 0.45 25.8 7.47 12.0 0.88 -0.5 0.23 1.03 -112.4 0.150 -81.6 0.51 12.7 7.50 13.0 0.89 -15.1 -0.86 0.91 -129.7 0.149 -95.7 0.54 -4.1 6.60 14.0 0.87 -31.6 -2.18 0.78 -148 0.143 -110.3 0.61 -20.1 4.57 15.0 0.88 -46.1 -3.85 0.64 -164.8 0.132 -124 0.65 -34.9 3.47 16.0 0.87 -54.8 -5.61 0.52 -178.4 0.121 -134.6 0.70 -45.6 2.04 17.0 0.87 -62.8 -7.09 0.44 170.1 0.116 -144.1 0.73 -55.9 1.05 18.0 0.92 -73.6 -8.34 0.38 156.1 0.109 -157.4 0.76 -68.7 1.90 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.17 0.34 34.80 0.04 27.83 0.9 0.22 0.32 53.00 0.04 23.57 1.0 0.24 0.32 60.50 0.04 22.93 1.9 0.42 0.29 108.10 0.04 18.35 2.0 0.45 0.29 111.10 0.04 17.91 2.4 0.51 0.30 136.00 0.04 16.39 3.0 0.59 0.32 169.90 0.05 15.40 3.9 0.69 0.34 -151.60 0.05 13.26 5.0 0.90 0.45 -119.50 0.09 11.89 5.8 1.14 0.50 -101.60 0.16 10.95 6.0 1.17 0.52 -99.60 0.18 10.64 7.0 1.24 0.58 -79.50 0.33 9.61 8.0 1.57 0.60 -57.90 0.56 8.36 9.0 1.64 0.69 -39.70 0.87 7.77 10.0 1.8 0.80 -22.20 1.34 7.68 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 3 v, i ds = 40 ma figure 19. msg/mag and |s 21 | 2 vs. frequency at 3v, 40 ma. mag s 21 frequency (ghz) msg/mag and s 21 (db) 020 10 515 40 35 30 25 20 15 10 5 0 -5 10 -15 msg
7 atf-54143 typical scattering parameters, v ds = 3v, i ds = 60 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.99 -18.9 28.84 27.66 167.6 0.01 80.0 0.54 -14.0 34.42 0.5 0.81 -80.8 26.04 20.05 128.0 0.03 52.4 0.40 -58.8 28.25 0.9 0.71 -117.9 22.93 14.01 106.2 0.04 41.8 0.29 -83.8 25.44 1.0 0.69 -124.4 22.24 12.94 102.2 0.05 40.4 0.27 -88.5 24.13 1.5 0.64 -149.8 19.40 9.34 86.1 0.05 36.1 0.21 -105.2 22.71 1.9 0.62 -164.9 17.66 7.64 75.6 0.06 33.8 0.17 -114.7 21.05 2.0 0.62 -168.3 17.28 7.31 73.3 0.06 33.3 0.17 -117.0 20.86 2.5 0.60 176.2 15.58 6.01 61.8 0.07 30.1 0.13 -129.7 19.34 3.0 0.60 162.3 14.15 5.10 51.0 0.08 26.5 0.11 -146.5 18. 04 4.0 0.62 137.1 11.81 3.90 30.8 0.09 17.1 0.10 165.2 1 4.87 5.0 0.66 115.5 9.87 3.11 11.7 0.11 6.8 0.14 131.5 13.27 6.0 0.69 97.2 8.22 2.58 -6.4 0.12 -3.9 0.18 112.4 11.72 7.0 0.70 80.2 6.85 2.20 -24.0 0.13 -15.8 0.20 94.3 10.22 8.0 0.72 62.2 5.58 1.90 -41.8 0.14 -28.0 0.23 70.1 9.02 9.0 0.76 45.0 4.40 1.66 -59.9 0.15 -39.6 0.29 50.6 8.38 10.0 0.83 28.4 3.06 1.42 -78.7 0.15 -55.1 0.38 36.8 8.71 11.0 0.85 13.9 1.60 1.20 -95.8 0.15 -68.6 0.46 24.4 7.55 12.0 0.88 -0.2 0.43 1.05 -111.1 0.15 -80.9 0.51 11.3 7.55 13.0 0.89 -14.6 -0.65 0.93 -128.0 0.15 -94.9 0.55 -5.2 6.70 14.0 0.88 -30.6 -1.98 0.80 -146.1 0.14 -109.3 0.61 -20.8 5.01 15.0 0.88 -45.0 -3.62 0.66 -162.7 0.13 -122.9 0.66 -35.0 3.73 16.0 0.88 -54.5 -5.37 0.54 -176.6 0.12 -133.7 0.70 -45.8 2.54 17.0 0.88 -62.5 -6.83 0.46 171.9 0.12 -143.2 0.73 -56.1 1.57 18.0 0.92 -73.4 -8.01 0.40 157.9 0.11 -156.3 0.76 -68.4 2.22 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.15 0.34 42.3 0.04 28.50 0.9 0.20 0.32 62.8 0.04 24.18 1.0 0.22 0.32 67.6 0.04 23.47 1.9 0.42 0.27 116.3 0.04 18.67 2.0 0.45 0.27 120.1 0.04 18.29 2.4 0.52 0.26 145.8 0.04 16.65 3.0 0.59 0.29 178.0 0.05 15.56 3.9 0.70 0.36 -145.4 0.05 13.53 5.0 0.93 0.47 -116.0 0.10 12.13 5.8 1.16 0.52 -98.9 0.18 11.10 6.0 1.19 0.55 -96.5 0.20 10.95 7.0 1.26 0.60 -77.1 0.37 9.73 8.0 1.63 0.62 -56.1 0.62 8.56 9.0 1.69 0.70 -38.5 0.95 7.97 10.0 1.73 0.79 -21.5 1.45 7.76 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 3v, i ds = 60 ma figure 20. msg/mag and |s 21 | 2 vs. frequency at 3v, 60 ma. mag s 21 frequency (ghz) msg/mag and s 21 (db) 020 10 515 40 35 30 25 20 15 10 5 0 -5 10 -15 msg
8 atf-54143 typical scattering parameters, v ds = 3v, i ds = 80 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.98 -20.4 28.32 26.05 167.1 0.01 79.4 0.26 -27.6 34.16 0.5 0.80 -85.9 25.32 18.45 126.8 0.04 53.3 0.29 -104.9 26.64 0.9 0.72 -123.4 22.10 12.73 105.2 0.05 43.9 0.30 -138.8 24.06 1.0 0.70 -129.9 21.40 11.75 101.3 0.05 42.7 0.30 -144.3 23.71 1.5 0.66 -154.6 18.55 8.46 85.4 0.06 38.6 0.30 -165.0 21.49 1.9 0.65 -169.5 16.81 6.92 74.9 0.07 35.7 0.29 -177.6 19.95 2.0 0.64 -172.8 16.42 6.62 72.6 0.07 35.0 0.29 179.4 19.76 2.5 0.64 172.1 14.69 5.42 61.1 0.09 30.6 0.29 164.4 17.80 3.0 0.63 158.5 13.24 4.59 50.1 0.10 25.5 0.29 150.2 16.62 4.0 0.66 133.8 10.81 3.47 29.9 0.12 13.4 0.33 126.1 14.61 5.0 0.69 112.5 8.74 2.74 11.1 0.13 1.2 0.39 107.8 12.03 6.0 0.72 94.3 7.03 2.25 -6.5 0.14 -11.3 0.42 91.8 10.52 7.0 0.73 77.4 5.63 1.91 -23.5 0.15 -24.5 0.44 75.5 9.12 8.0 0.74 59.4 4.26 1.63 -41.1 0.16 -38.1 0.47 55.5 7.78 9.0 0.78 42.1 2.98 1.41 -58.7 0.17 -51.1 0.52 37.8 7.12 10.0 0.84 25.6 1.51 1.19 -76.4 0.16 -66.8 0.59 24.0 6.96 11.0 0.86 11.4 0.00 1.00 -92.0 0.16 -79.8 0.64 11.8 6.11 12.0 0.88 -2.6 -1.15 0.88 -105.9 0.16 -91.7 0.68 -0.8 5.67 13.0 0.89 -17.0 -2.18 0.78 -121.7 0.15 -105.6 0.70 -16.7 5.08 14.0 0.87 -33.3 -3.48 0.67 -138.7 0.14 -119.5 0.73 -31.7 3.67 15.0 0.87 -47.3 -5.02 0.56 -153.9 0.13 -132.3 0.76 -44.9 2.65 16.0 0.86 -55.6 -6.65 0.47 -165.9 0.12 -141.7 0.78 -54.9 1.48 17.0 0.86 -63.4 -7.92 0.40 -175.9 0.11 -150.4 0.79 -64.2 0.49 18.0 0.91 -74.2 -8.92 0.36 171.2 0.10 -163.0 0.81 -76.2 1.29 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.19 0.23 66.9 0.04 27.93 0.9 0.24 0.24 84.3 0.04 24.13 1.0 0.25 0.25 87.3 0.04 23.30 1.9 0.43 0.28 134.8 0.04 18.55 2.0 0.42 0.29 138.8 0.04 18.15 2.4 0.51 0.30 159.5 0.03 16.44 3.0 0.61 0.35 -173 0.03 15.13 3.9 0.70 0.41 -141.6 0.06 12.97 5.0 0.94 0.52 -113.5 0.13 11.42 5.8 1.20 0.56 -97.1 0.23 10.48 6.0 1.26 0.58 -94.8 0.26 10.11 7.0 1.34 0.62 -75.8 0.46 8.86 8.0 1.74 0.63 -55.5 0.76 7.59 9.0 1.82 0.71 -37.7 1.17 6.97 10.0 1.94 0.79 -20.8 1.74 6.65 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 3v, i ds = 80 ma figure 21. msg/mag and |s 21 | 2 vs. frequency at 3v, 80 ma. mag s 21 frequency (ghz) msg/mag and s 21 (db) 020 10 515 40 35 30 25 20 15 10 5 0 -5 10 -15 msg
9 atf-54143 typical scattering parameters, v ds = 4v, i ds = 60 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.99 -18.6 28.88 27.80 167.8 0.01 80.1 0.58 -12.6 34.44 0.5 0.81 -80.2 26.11 20.22 128.3 0.03 52.4 0.42 -52.3 28.29 0.9 0.71 -117.3 23.01 14.15 106.4 0.04 41.7 0.31 -73.3 25.49 1.0 0.69 -123.8 22.33 13.07 102.4 0.04 40.2 0.29 -76.9 25.14 1.5 0.64 -149.2 19.49 9.43 86.2 0.05 36.1 0.22 -89.4 22.76 1.9 0.62 -164.5 17.75 7.72 75.7 0.06 34.0 0.18 -95.5 21.09 2.0 0.61 -167.8 17.36 7.38 73.3 0.06 33.5 0.18 -97.0 20.90 2.5 0.60 176.6 15.66 6.07 61.9 0.07 30.7 0.14 -104.0 19.38 3.0 0.60 162.6 14.23 5.15 51.1 0.07 27.3 0.11 -113.4 18.67 4.0 0.62 137.4 11.91 3.94 30.9 0.09 18.7 0.07 -154.7 15.46 5.0 0.65 115.9 10.00 3.16 11.7 0.10 9.0 0.09 152.5 13.20 6.0 0.68 97.6 8.36 2.62 -6.6 0.11 -1.4 0.12 127.9 11.73 7.0 0.70 80.6 7.01 2.24 -24.3 0.12 -12.9 0.15 106.9 10.47 8.0 0.72 62.6 5.76 1.94 -42.3 0.13 -24.7 0.17 78.9 9.31 9.0 0.76 45.4 4.60 1.70 -60.5 0.14 -36.1 0.23 56.8 8.69 10.0 0.83 28.5 3.28 1.46 -79.6 0.15 -51.8 0.32 42.1 9.88 11.0 0.86 14.1 1.87 1.24 -97.0 0.15 -65.4 0.41 29.4 9.17 12.0 0.88 -0.4 0.69 1.08 -112.8 0.15 -78.0 0.47 16.0 8.57 13.0 0.90 -14.9 -0.39 0.96 -130.2 0.15 -92.2 0.51 -1.1 8.06 14.0 0.87 -31.4 -1.72 0.82 -148.8 0.15 -107.3 0.58 -17.6 4.90 15.0 0.88 -46.0 -3.38 0.68 -166.0 0.14 -121.2 0.63 -32.6 3.86 16.0 0.88 -54.8 -5.17 0.55 179.8 0.13 -132.2 0.69 -43.7 2.65 17.0 0.87 -62.8 -6.73 0.46 168.4 0.12 -142.3 0.72 -54.2 1.33 18.0 0.92 -73.7 -7.93 0.40 154.3 0.11 -155.6 0.75 -67.2 2.26 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.17 0.33 34.30 0.03 28.02 0.9 0.25 0.31 60.30 0.04 24.12 1.0 0.27 0.31 68.10 0.04 23.43 1.9 0.45 0.27 115.00 0.04 18.72 2.0 0.49 0.27 119.80 0.04 18.35 2.4 0.56 0.26 143.50 0.04 16.71 3.0 0.63 0.28 176.80 0.04 15.58 3.9 0.73 0.35 -145.90 0.05 13.62 5.0 0.96 0.47 -116.20 0.11 12.25 5.8 1.20 0.52 -98.80 0.19 11.23 6.0 1.23 0.54 -96.90 0.21 11.02 7.0 1.33 0.60 -77.40 0.38 9.94 8.0 1.66 0.63 -56.20 0.64 8.81 9.0 1.71 0.71 -38.60 0.99 8.22 10.0 1.85 0.82 -21.30 1.51 8.12 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 4v, i ds = 60 ma figure 22. msg/mag and |s 21 | 2 vs. frequency at 4v, 60 ma. msg s 21 frequency (ghz) msg/mag and s 21 (db) 020 10 515 40 35 30 25 20 15 10 5 0 -5 10 -15 msg mag mag
10 atf-54143 applications information introduction agilent technologiess atf-54143 is a low noise enhancement mode phemt designed for use in low cost commercial applications in the vhf through 6 ghz frequency range. as opposed to a typical depletion mode phemt where the gate must be made negative with respect to the source for proper operation, an enhancement mode phemt requires that the gate be made more positive than the source for normal operation. therefore a negative power supply voltage is not required for an enhancement mode device. biasing an enhancement mode phemt is much like biasing the typical bipolar junction transistor. instead of a 0.7 v base to emitter voltage, the atf-54143 enhance- ment mode phemt requires about a 0.6v potential between the gate and source for a nominal drain current of 60 ma. matching networks the techniques for impedance matching an enhancement mode device are very similar to those for matching a depletion mode device. the only difference is in the method of supplying gate bias. s and noise parameters for various bias conditions are listed in this data sheet. the circuit shown in figure 1 shows a typical lna circuit normally used for 900 and 1900 mhz applications (consult the agilent technologies website for application notes covering specific applications). high pass impedance matching networks consisting of l1/c1 and l4/c4 provide the appropriate match for noise figure, gain, s11 and s22. the high pass structure also provides low frequency gain reduction which can be beneficial from the standpoint of improving out-of-band rejection at lower frequencies. input c1 c2 c3 c7 l1 r5 r6 r7 r3 r2 r1 q2 vdd r4 l2 l3 l4 q1 zo zo c4 c5 c6 output figure 1. typical atf-54143 lna with passive biasing. capacitors c2 and c5 provide a low impedance in-band rf bypass for the matching net- works. resistors r3 and r4 provide a very important low frequency termination for the device. the resistive termination improves low frequency stability. capacitors c3 and c6 provide the low frequency rf bypass for resistors r3 and r4. their value should be chosen carefully as c3 and c6 also provide a termina- tion for low frequency mixing products. these mixing products are as a result of two or more in- band signals mixing and produc- ing third order in-band distortion products. the low frequency or difference mixing products are bypassed by c3 and c6. for best suppression of third order distortion products based on the cdma 1.25 mhz signal spacing, c3 and c6 should be 0.1 f in value. smaller values of capaci- tance will not suppress the generation of the 1.25 mhz difference signal and as a result will show up as poorer two tone ip3 results. bias networks one of the major advantages of the enhancement mode technol- ogy is that it allows the designer to be able to dc ground the source leads and then merely apply a positive voltage on the gate to set the desired amount of quiescent drain current i d . whereas a depletion mode phemt pulls maximum drain current when v gs = 0v, an en- hancement mode phemt pulls only a small amount of leakage current when v gs = 0v. only when v gs is increased above v to , the device threshold voltage, will drain current start to flow. at a v ds of 3v and a nominal v gs of 0.6v, the drain current i d will be approximately 60 ma. the data sheet suggests a minimum and maximum v gs over which the desired amount of drain current will be achieved. it is also impor- tant to note that if the gate terminal is left open circuited, the device will pull some amount of drain current due to leakage current creating a voltage differ- ential between the gate and source terminals. passive biasing passive biasing of the atf-54143 is accomplished by the use of a voltage divider consisting of r1 and r2. the voltage for the divider is derived from the drain voltage which provides a form of voltage feedback through the use of r3 to help keep drain current constant. resistor r5 (approxi- mately 10k ? ) provides current limiting for the gate of enhance- ment mode devices such as the atf-54143. this is especially important when the device is driven to p 1db or p sat . resistor r3 is calculated based on desired v ds , i ds and available power supply voltage. r3 = v dd C v ds (1) p i ds + i bb v dd is the power supply voltage. v ds is the device drain to source voltage. i ds is the desired drain current. i bb is the current flowing through the r1/r2 resistor voltage divider network.
11 the values of resistors r1 and r2 are calculated with the following formulas r1 = v gs (2) p i bb r2 = (v ds C v gs ) r1 (3) p v gs example circuit v dd = 5 v v ds = 3v i ds = 60 ma v gs = 0.59v choose i bb to be at least 10x the normal expected gate leakage current. i bb was chosen to be 2 ma for this example. using equations (1), (2), and (3) the resistors are calculated as follows r1 = 295 ? r2 = 1205 ? r3 = 32.3 ? active biasing active biasing provides a means of keeping the quiescent bias point constant over temperature and constant over lot to lot variations in device dc perfor- mance. the advantage of the active biasing of an enhancement mode phemt versus a depletion mode phemt is that a negative power source is not required. the techniques of active biasing an enhancement mode device are very similar to those used to bias a bipolar junction transistor. input c1 c2 c3 c7 l1 r5 r6 r7 r3 r2 r1 q2 vdd r4 l2 l3 l4 q1 zo zo c4 c5 c6 output figure 2. typical atf-54143 lna with active biasing. an active bias scheme is shown in figure 2. r1 and r2 provide a constant voltage source at the base of a pnp transistor at q2. the constant voltage at the base of q2 is raised by 0.7 volts at the emitter. the constant emitter voltage plus the regulated v dd supply are present across resis- tor r3. constant voltage across r3 provides a constant current supply for the drain current. resistors r1 and r2 are used to set the desired vds. the com- bined series value of these resistors also sets the amount of extra current consumed by the bias network. the equations that describe the circuits operation are as follows. v e = v ds + (i ds ? r4) (1) r3 = v dd C v e (2) p i ds v b = v e C v be (3) v b = r1 v dd (4) p r1 + r2 v dd = i bb (r1 + r2) (5) rearranging equation (4) provides the following formula r2 = r 1 (v dd C v b ) (4a) p v b and rearranging equation (5) provides the following formula r1 = v dd (5a) 9 i bb ( 1 + v dd C v b ) p v b example circuit v dd = 5v v ds = 3v i ds = 60 ma r4 = 10 ? v be = 0.7 v equation (1) calculates the required voltage at the emitter of the pnp transistor based on desired v ds and i ds through resistor r4 to be 3.6v. equation (2) calculates the value of resis- tor r3 which determines the drain current i ds . in the example r3 =23.3 ? . equation (3) calcu- lates the voltage required at the junction of resistors r1 and r2. this voltage plus the step-up of the base emitter junction deter- mines the regulated v ds . equa- tions (4) and (5) are solved simultaneously to determine the value of resistors r1 and r2. in the example r1=1450 ? and r2 =1050 ? . r7 is chosen to be 1k ? . this resistor keeps a small amount of current flowing through q2 to help maintain bias stability. r6 is chosen to be 10k ? . this value of resistance is necessary to limit q1 gate current in the presence of high rf drive level (especially when q1 is driven to p 1db gain com- pression point).
12 gate source inside package port g num=1 c c1 c=0.13 pf port s1 num=2 source drain port s2 num=4 port d num=3 l l6 l=0.175 nh r=0.001 c c2 c=0.159 pf l l7 l=0.746 nh r=0.001 msub tlinp tl4 z=z1 ohm l=15 mil k=1 a=0.000 f=1 ghz tand=0.001 tlinp tl10 z=z1 ohm l=15 mil k=1 a=0.000 f=1 ghz tand=0.001 tlinp tl3 z=z2 ohm l=25 mil k=k a=0.000 f=1 ghz tand=0.001 tlinp tl9 z=z2 ohm l=10.0 mil k=k a=0.000 f=1 ghz tand=0.001 var var1 k=5 z2=85 z1=30 var egn tlinp tl1 z=z2/2 ohm l=20 0 mil k=k a=0.0000 f=1 ghz tand=0.001 tlinp tl2 z=z2/2 ohm l=20 0 mil k=k a=0.0000 f=1 ghz tand=0.001 tlinp tl8 z=z1 ohm l=15.0 mil k=1 a=0.0000 f=1 ghz tand=0.001 tlinp tl7 z=z2/2 ohm l=5.0 mil k=k a=0.0000 f=1 ghz tand=0.001 tlinp tl5 z=z2 ohm l=26.0 mil k=k a=0.0000 f=1 ghz tand=0.001 tlinp tl6 z=z1 ohm l=15.0 mil k=1 a=0.0000 f=1 ghz tand=0.001 l l1 l=0.477 nh r=0.001 l l4 l=0.4 nh r=0.001 gaasfet fet1 mode1=mesfetm1 mode=nonlinear msub msub1 h=25.0 mil er=9.6 mur=1 cond=1.0e+50 hu=3.9e+034 mil t=0.15 mil tand=0 rough=0 mil nfet=yes pfet=no vto=0.3 beta=0.9 lambda=82e-3 alpha=13 tau= tnom=16.85 idstc= ucrit=-0.72 vgexp=1.91 gamds=1e-4 vtotc= betatce= rgs=0.25 ohm rf= gscap=2 cgs=1.73 pf cgd=0.255 pf gdcap=2 fc=0.65 rgd=0.25 ohm rd=1.0125 ohm rg=1.0 ohm rs=0.3375 ohm ld= lg=0.18 nh ls= cds=0.27 pf rc=250 ohm crf=0.1 f gsfwd= gsrev= gdfwd= gdrev= r1= r2= vbi=0.8 vbr= vjr= is= ir= imax= xti= eg= n= fnc=1 mhz r=0.08 p=0.2 c=0.1 taumdl=no wvgfwd= wbvgs= wbvgd= wbvds= wldsmax= wpmax= allparams= advanced_curtice2_model mesfetm1 atf-54143 die model atf-54143 curtice ads model
13 figure 3. adding vias to the atf-54143 non-linear model for comparison to measured s and noise parameters. designing with s and noise parameters and the non-linear model the non-linear model describing the atf-54143 includes both the die and associated package model. the package model includes the effect of the pins but does not include the effect of the additional source inductance associated with grounding the source leads through the printed circuit board. the device s and noise parameters do include the effect of 0.020 inch thickness printed circuit board vias. when comparing simulation results between the measured s param- drain via2 v1 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil via2 v2 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil via2 v4 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil source gate source atf-54143 msub msub1 h=25.0 mil er=9.6 mur=1 cond=1.0e+50 hu=3.9e+034 mil t=0.15 mil tand=0 rough=0 mil msub via2 v3 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil eters and the simulated non- linear model, be sure to include the effect of the printed circuit board to get an accurate compari- son. this is shown schematically in figure 3. for further information the information presented here is an introduction to the use of the atf-54143 enhancement mode phemt. more detailed application circuit information is available from agilent technologies. consult the web page or your local agilent technologies sales representative.
14 noise parameter applications information f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements, a true f min is calculated. f min repre- sents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50 ? , to an impedance represented by the reflection coefficient g o . the designer must design a matching network that will present g o to the device with minimal associ- ated circuit losses. the noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. the noise figure of the device is equal to f min only when the device is presented with g o . if the reflection coefficient of the matching network is other than g o , then the noise figure of the device will be greater than f min based on the following equation. nf = f min + 4 r n | s C o | 2 zo (|1 + o | 2 )(1 - | s | 2 ) where r n /z o is the normalized noise resistance, o is the opti- mum reflection coefficient required to produce f min and s is the reflection coefficient of the source impedance actually presented to the device. the losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. the losses of the matching networks are related to the q of the components and associated printed circuit board loss. o is typically fairly low at higher frequencies and increases as frequency is lowered. larger gate width devices will typically have a lower o as compared to narrower gate width devices. typically for fets, the higher o usually infers that an impedance much higher than 50 ? is required for the device to produce f min . at vhf frequencies and even lower l band frequencies, the required impedance can be in the vicinity of several thousand ohms. match- ing to such a high impedance requires very hi-q components in order to minimize circuit losses. as an example at 900 mhz, when airwwound coils (q > 100) are used for matching networks, the loss can still be up to 0.25 db which will add directly to the noise figure of the device. using muiltilayer molded inductors with qs in the 30 to 50 range results in additional loss over the airwound coil. losses as high as 0.5 db or greater add to the typical 0.15 db f min of the device creating an amplifier noise figure of nearly 0.65 db. a discussion concerning calculated and measured circuit losses and their effect on ampli- fier noise figure is covered in agilent application 1085.
15 ordering information part number no. of devices container atf-54143-tr1 3000 7" reel atf-54143-tr2 10000 13" reel atf-54143-blk 100 antistatic bag atf-54143-tr1g 3000 7 reel atf-54143-tr2g 10000 13reel atf-54143-blkg 100 antistatic bag dimensions symbol min (mm) max (mm) e 1.15 1.35 d 1.85 2.25 he 1.80 2.40 a 0.80 1.10 a2 0.80 1.00 a1 0.00 0.10 b 0.25 0.40 b1 0.55 0.70 c 0.10 0.20 l 0.10 0.46 note: for lead-free option, the part number will have the characger "g" at the end. note: 1. all dimensions are in mm. 2. dimensions are inclusive of plating. 3. dimensions are exclusive of mold flash and metal burr. 4. all specifications comply with eiaj sc70. 5. die is facing up for mold and facing down for trim/form, i.e., reverse trim/form. 6. package surface to be mirror finish. package dimensions outline 43 (so%-343/sc70 4 lead)
16 user feed direction cover tape carrier tape reel end view 8 mm 4 mm top view 71 71 71 71 device orientation recommended pcb pad layout for agilent's sc70 4l/sot-343 products (dimensions in inches/mm)
for product information and a complete list of agilent contacts and distributors, please go to our web site. www.agilent.com/semiconductors e-mail: semiconductorsupport@agilent.com data subject to change. copyright ? 2004 agilent technologies, inc. obsoletes 5989-0034en december 10, 2004 5989-1922en tape dimensions and product orientation description symbol size (mm) size (inches) cavity length a o 2.40 0.10 0.094 0.004 width b o 2.40 0.10 0.094 0.004 depth k o 1.20 0.10 0.047 0.004 pitch p 4.00 0.10 0.157 0.004 bottom hole diameter d 1 1.00 + 0.25 0.039 + 0.010 perforlation diameter d 1.50 + 0.10 0.061 + 0.002 pitch p o 4.00 0.10 0.157 0.004 position e 1.75 0.10 0.069 0.004 carrier tape width w 8.00 + 0.30 - 0.10 0.315 + 0.012 thickness t 1 0.254 0.02 0.0100 0.0008 cover tape width c 5.40 0.010 0.205 + 0.004 thickness t t 0.062 0.001 0.0025 0.0004 distance cavity to perforation f 3.50 0.05 0.138 0.002 (width direction) cavity to perforation p 2 2.00 0.05 0.079 0.002 (length direction)

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